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  Datasheet File OCR Text:
 VBO 105
Single Phase Rectifier Bridge
IdAVM = 107 A VRRM = 1200-1800 V
-
VRSM V 900 1200 1400 1600 1800
VRRM V 800 1200 1400 1600 1800
Type
+
VBO VBO VBO VBO VBO
105-08NO7 105-12NO7 105-14NO7 105-16NO7 105-18NO7*
~ ~
-
~
+
~
Maximum Ratings 107 A A A A A A2s A2s A2s A2s C C C V~ V~ Nm lb.in. Nm lb.in. g Features * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 72873 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling
* delivery time on request Symbol IdAVM IFSM Conditions TC = 85C, module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 5 44 5 44 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
1500 1650 1350 1500 11250 11300 9120 9350 -40...+150 150 -40...+150 2500 3000 15% 15% 15% 15% 225
Mounting torque (M5) Terminal connection torque (M5)
Dimensions in mm (1 mm = 0.0394")
Weight
typ.
Symbol IR VF VT0 rT RthJC RthJK
Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25C TVJ = TVJM TVJ = 25C
Characteristic Values 0.3 8.0 1.6 0.8 5 0.83 0.138 1.13 0.188 mA mA V V m K/W K/W K/W K/W
For power-loss calculations only TVJ = TVJM per per per per diode; 180 module; 180 diode; 180 module; 180
Data according to IEC 60747 refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
1-2
(c) 2003 IXYS All rights reserved
316
VBO 105
200
A
I F(OV) -----I FSM
IFSM (A) TVJ=45C TVJ=150C 1350
10
5
2 As
160
T=150C
1.6
1500
1.4
120
1.2
10
4 TVJ=45C
80
T=25C
1
0 VRRM
TVJ=150C
0.8
1/2 V RRM
40
IF
0.6
1 VRRM
0
VF
0.4
10
10 1 t[ms] 10 2 10 3
3 1 2 4 t [ms] 6 10
1
1.5 V
0 10
Fig. 1 Forward current versus voltage drop per diode
300 [W]
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
TC
85
Fig. 3 i2dt versus time (1-10ms) per diode or thyristor
120
[A] DC sin.180 rec.120 rec.60 rec.30
PSB 105
0.19 0.11 = RTHCA [K/W] 0.28
90 95 100
250
90
200
0.44
105 110 115
60
150
0.77
120 125
30
100
50
PVTOT 0 IFAVM
DC sin.180 rec.120 rec.60 rec.30
1.77
130 135 140 145
IdAV
0
50
100
TC(C)
150
200
F4
C
150
50
0 100 [A]
50 Tamb
100 [K]
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current at case temperature
1.5
K/W Z thJK
1
Z thJC
0.5
Zth
0.01
0.1 t[s]
1
10
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2003 IXYS All rights reserved
2-2
316


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